Monolayer Graphene on SiO₂/Si - Fully Covered - Processed in Clean Room Class 1000

This monolayer graphene on SiO₂/Si (fully covered) is a bidimensional material produced by CVD and transferred to a circular substrate of SiO₂/Si (90nm) by a wet transfer process. We consider it to be a benchmark product in the graphene market - not only for its excellent quality, but also for its shape, size and number of applications.

Graphene Film

• Growth method: CVD synthesis

• Appearance (color): Transparent

• Transparency: > 97%

• Coverage: > 98%

• Number of graphene layers: 1

• Thickness (theoretical): 0.345 nm

• FET Electron Mobility on Al2O3 passivated SiO2/Si: 6900 cm2

• FET Electron Mobility on SiO₂/Si: 3760 cm2

• Sheet Resistance on SiO₂/Si: 450±40 Ohms/sq (1cm x1cm)

• Grain size: Up to 20 μm

Substrate SiO₂/Si

• Dry Oxide Thickness: 90 nm (+/-5%)

• Type/Dopant: P/B

• Orientation: <100>

• Resistivity: 1-10 ohm·cm

• Thickness: 675 +/- 20 μm

• Front surface: Single Side Polished

• Back Surface: Etched

• Particles: <10@0.3 μm

Quality Control

All our samples are subjected to a rigorous QC in order to ensure a high quality and reproducibility of the graphene. All our CVD materials are processed in Clean Room Class 1000. Each batch must pass the following tests:

• Raman Spectroscopy on each batch: I(G)/I(2D)<0.7; I(D)/I(G)<0.05

• Optical Microscopy inspection of each individual sample to ensure good transfer quality and purity

If your application requires more specific controls (AFM, SEM...) please do not hesitate to contact us.