Monolayer Graphene on SiO₂/Si 90 nm

Monolayer Graphene on SiO₂/Si 90 nm

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Monolayer Graphene on SiO₂/Si - Fully Covered - Processed in Clean Room Class 1000

This monolayer graphene on SiO₂/Si (fully covered) is a bidimensional material produced by CVD and transferred to a circular substrate of SiO₂/Si (90nm) by a wet transfer process. We consider it to be a benchmark product in the graphene market - not only for its excellent quality, but also for its shape, size and number of applications.

Graphene Film

  • Growth method: CVD synthesis

  • Appearance (color): Transparent

  • Transparency: > 97%

  • Coverage: > 98%

  • Number of graphene layers: 1

  • Thickness (theoretical): 0.345 nm

  • FET Electron Mobility on Al2O3 passivated SiO2/Si: 6900 cm2

  • FET Electron Mobility on SiO₂/Si: 3760 cm2

  • Sheet Resistance on SiO₂/Si: 450±40 Ohms/sq (1cm x1cm)

  • Grain size: Up to 20 μm

Substrate SiO₂/Si

  • Dry Oxide Thickness: 90 nm (+/-5%)

  • Type/Dopant: P/B

  • Orientation: <100>

  • Resistivity: 1-10 ohm·cm

  • Thickness: 675 +/- 20 μm

  • Front surface: Single Side Polished

  • Back Surface: Etched

  • Particles: <10@0.3 μm

Quality Control

All our samples are subjected to a rigorous QC in order to ensure a high quality and reproducibility of the graphene. All our CVD materials are processed in Clean Room Class 1000. Each batch must pass the following tests:

  • Raman Spectroscopy on each batch: I(G)/I(2D)<0.7; I(D)/I(G)<0.05

  • Optical Microscopy inspection of each individual sample to ensure good transfer quality and purity

If your application requires more specific controls (AFM, SEM...) please do not hesitate to contact us.

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